Bulk Gallium Nitride, N-type. 
Diameter: 50.8mm +/- 1mm 
Orientation: c-axis +/- 1° 
Nominal thickness: 250 +/- 50µm 
Typical Resistivity:<0.05 Ohm-cm 
Dislocation Density: <1x10^7 cm-2 
Front surface finish: Epi-ready, RMS <1 nm 
Back surface finish: Optical finish 
Prime Grade

2" N-type Bulk GaN

$2,380.00Price
CMP Face
  • Bulk Gallium Nitride, N-type. 
    Diameter: 50.8mm +/- 1mm 
    Orientation: c-axis +/- 1° 
    Nominal thickness: 250 +/- 50µm 
    Typical Resistivity:<0.05 Ohm-cm 
    Dislocation Density: <1x10^7 cm-2 
    Front surface finish: Epi-ready, RMS <1 nm 
    Back surface finish: Optical finish 
    Prime Grade

ABOUT US

Kyma Technologies is located in the Research Triangle area of North Carolina. Kyma is focused on advancing wide bandgap semiconductors for power electronics applications and manufactures gallium nitride (GaN), aluminum nitride (AlN), and gallium oxide (Ga2O3) substrates, devices, and crystal growth systems. Kyma also offers niche design and fabrication services for devices made from these materials.

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